Fabrication & Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications

£46.49 £61.99

Fabrication & Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications

Name: Fabrication & Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications
Brand: Nova Science Publishers, Inc (US)
Price: 46.49 GBP
Availability: OutOfStock

Written by Pham Huynh Tram, Yoon Soon Fatt and Lim Kim Peng

£46.49 £61.99

Out of stock

Recently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (InSbN) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (HgCdTe) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.

ISBN-13: 9781621009405
Publisher: Nova Science Publishers Inc
Imprint: Nova Science Publishers, Inc (US)
Publication date: 1 April 2012
Format: Paperback
Dimensions: 155 x 230 mm
Language: English